1SS300(T5L.H)

The 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devide that can be used in ultra high speed switching applications. Features of the 1SS302 are:(1)Small package: SC-70; (2)Low forward voltage: VF (3) = 0.92 V (typ.); (3)Fast reverse recovery time: trr = 1.6 ns (typ.); (4)Small total capacitance: CT = 2.2 pF (typ.).

The absolute maximum ratings of the 1SS302 can be summarized as:(1)Maximum (peak) reverse voltage: 85 V;(2)Reverse voltage: 80 V;(3)Maximum (peak) forward current: 300 mA;(4)Average forward current: 100  mA;(5)Surge current (10 ms): 2 A;(6)Power dissipation: 100 mW;(7)Junction temperature: 125 °C;(8)Storage temperature: -55 to 125 °C.

The electrical characteristics of 1SS302 can be summarized as:(1)Forward voltage: 0.61 to 1.20 V;(2)Reverse current: 0.1 or 0.5 uA;(3)Total capacitance: 2.2 to 4.0 pF;(4)Reverse recovery time: 1.6 to 4.0 ns. If you want to know more information about 1SS302, please download the datasheet in www.seekic.com or www.chinaicmart.com .