Features: `Small package`Low forward voltage :VF =0.23V(Typ).`Low reverse current: IR = 5 A(Max.)Specifications Parameter Symbol Rating Unit Maximum(Peak) Reverse Voltage VRM 45 V Reverse Voltage VR 40 V Maximum(Peak) Forward Current IFM 300* mA...
1SS396: Features: `Small package`Low forward voltage :VF =0.23V(Typ).`Low reverse current: IR = 5 A(Max.)Specifications Parameter Symbol Rating Unit Maximum(Peak) Reverse Voltage VRM ...
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DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
Parameter |
Symbol |
Rating |
Unit |
Maximum(Peak) Reverse Voltage |
VRM |
45 |
V |
Reverse Voltage |
VR |
40 |
V |
Maximum(Peak) Forward Current |
IFM |
300* |
mA |
Average Rectified Current |
IO |
100* |
mA |
Surge Current (10 ms) |
IFSM |
1* |
A |
Power Dissipation |
P |
150 |
mW |
Junction Temperature |
Tj |
125 |
|
Storage Temperature Range |
Tstg |
-55 to +125 |
|
Poerating Temperature |
Topr |
-40 to +100 |