Features: ·Low forward voltage : VF (2) = 0.23V (typ.) @IF = 5mA ·Small package : SC-61Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Aver...
1SS391: Features: ·Low forward voltage : VF (2) = 0.23V (typ.) @IF = 5mA ·Small package : SC-61Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage...
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DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
Characteristic | Symbol | Rating | Unit |
Maximum (peak) reverse Voltage | VRM | 15 | V |
Reverse voltage | VR | 10 | V |
Maximum (peak) forward current | IFM | 200 * | mA |
Average forward current | IO | 100 * | mA |
Surge current (10ms) | IFSM | 1 * | A |
Power dissipation | P | 150 | mW |
Junction temperature | Tj | 125 | |
Storage temperature range | Tstg | −55∼125 | |
Operating temperature range | Topr | −40∼100 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).