Features: ·Small Package·Low Forward Voltage :VF(3) = 0.54V(TYP.)·Low Reverse Current :IR = 5 Ìa(TYP.)Specifications Characteristic Symbol Rating Unit Maximum (Peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (Peak) forward current IFM 200 mA Avera...
1SS388: Features: ·Small Package·Low Forward Voltage :VF(3) = 0.54V(TYP.)·Low Reverse Current :IR = 5 Ìa(TYP.)Specifications Characteristic Symbol Rating Unit Maximum (Peak) reverse voltag...
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DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
Characteristic | Symbol | Rating | Unit |
Maximum (Peak) reverse voltage | VRM | 85 | V |
Reverse voltage | VR | 80 | V |
Maximum (Peak) forward current | IFM | 200 | mA |
Average forwrad current | IO | 100 | mA |
Surge current (10 ms) | IFSM | 1 | A |
Power dissipation | P* | 150 | mW |
Junction temperature | Tj | 125 | |
Storage temperature range | Tstg | -55 to + 125 | |
Operating temperature range | Topr | -44 to + 100 |