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1SS382

Features: ·Small package·Composed of 2 independent diodes.·Low forward voltage : VF (3) = 0.92V (typ.)·Fast reverse recovery time : Trr = 1.6ns (typ.)Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (p...

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1SS382: Features: ·Small package·Composed of 2 independent diodes.·Low forward voltage : VF (3) = 0.92V (typ.)·Fast reverse recovery time : Trr = 1.6ns (typ.)Specifications Characteristic Symbol Ra...

1SS382 Data Sheet

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Part Number:
1SS382
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Small package
·Composed of 2 independent diodes.
·Low forward voltage : VF (3) = 0.92V (typ.)
·Fast reverse recovery time : Trr = 1.6ns (typ.)


Specifications

Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 85 V
Reverse voltage VR 80 V
Maximum (peak) forward current IFM 300* mA
Average forward current IO 100* mA
Surge current (10ms) IFSM 2 A
Power dissipation P 100* mW
Junction temperature Tj 125
Storage temperature Tstg -55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating * 1.5




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