Features: Small packageLow forward voltage : VF = 0.23V (typ.) @ IF=5mAPinoutSpecifications Parameter Symbol Rating Unit Maximum (Peak) reverse voltage VRM 15 V Reverse voltage VR 10 V Average forward current IO 100 * mA Maximum (Peak) forward c...
1SS372: Features: Small packageLow forward voltage : VF = 0.23V (typ.) @ IF=5mAPinoutSpecifications Parameter Symbol Rating Unit Maximum (Peak) reverse voltage VRM 15 V Reverse ...
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Parameter |
Symbol |
Rating |
Unit |
Maximum (Peak) reverse voltage |
VRM |
15 |
V |
Reverse voltage |
VR |
10 |
V |
Average forward current |
IO |
100 * |
mA |
Maximum (Peak) forward current |
IFM |
200 * |
mA |
Surge current (10ms) |
IFSM |
1 * |
A |
Power dissipation |
P |
100 |
mW |
Junction temperature |
Tj |
125 |
°C |
Storage temperature |
Tstg |
-55 to +125 |
°C |
Operating Temperature Range |
Topr |
-40 to 100 |
°C |
The 1SS372 is designed as one kind of TOSHIBA diode silicon epitaxial planar type device that can be used in ultra high speed switching application. Features of 1SS372 are:(1)small package;(2)low forward voltage: VF(3) = 0.23 V (typ.) @ IF = 5 mA.
The absolute maximum ratings of the 1SS372 can be summarized as:(1)maximum (peak) reverse voltage: 15 V;(2)reverse voltage: 10 V;(3)maximum (peak) forward current: 200 mA;(4)average forward current: 100 mA;(5)surge current (10 ms): 1 A;(6)power dissipation: 100 mW;(7)junction temperature: 125 ;(8)storage temperature: -55 to +125 ;(9)operating temperature range: -40 to +100 .
The electrical characteristics of 1SS372 can be summarized as:(1)forward voltage: 0.18 to 0.50 V;(2)reverse current: 20 uA;(3)total capacitance: 20 to 40 pF;(4)reverse recovery time: 1.6 to 4.0 ns. If you want to know more information such as the electrical characteristics about the 1SS372, please download the datasheet in www.seekic.com or www.chinaicmart.com.