Application·Small package·Excellent in forward current and forward voltage characteristics : VF (3) = 0.9 V (typ.)·Fast reverse recovery time : trr = 1.6 ns (typ.)·Small total capacitance : CT = 0.9 pF (typ.)Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse voltage...
1SS361FV: Application·Small package·Excellent in forward current and forward voltage characteristics : VF (3) = 0.9 V (typ.)·Fast reverse recovery time : trr = 1.6 ns (typ.)·Small total capacitance : CT = 0.9...
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DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
Characteristic | Symbol | Rating | Unit |
Maximum (peak) reverse voltage | VRM | 85 | V |
Reverse voltage | VR | 80 | V |
Maximum (peak) forward current | IFM | 300* | mA |
Average forward current | IO | 100* | mA |
Surge current (10ms) | IFSM | 2* | A |
Power dissipation | P | 150* | mW |
Junction temperature | Tj | 150 | |
Storage temperature range | Tstg | -55~150 |