1SS361F

The 1SS361F is a kind of diode silicon epitaxial planar type. It is intended for ultra high speed switching applications. The features of the 1SS361F are as follows: (1)small package: 1608 flat lead; (2)wexcellent in forward current and forward voltage characteristics: VF(3)=0.9 V typ; (3)fast reverse recovery time: trr=1.6 ns typ; (4)small total capacitance: CT=0.9 pF typ.

The maximum ratings of 1SS361F are (Ta=25): (1)maximum (peak) reverse voltage, VRM: 85 V; (2)reverse voltage, VF: 80 V; (3)maximum (peak) forward current, IFM: 300 mA; (4)average forward current, IO: 100 mA; (5)surge current (10 ms), IFSM: 2 A; (6)power dissipation, P: 100 mW; (7)junction temperature, Tj: 125; (8)storage temperature range, Tstg: -55 to 125.

The electrical characteristics of 1SS361F are (Ta=25): (1)forward voltage, VF: 0.60 V typ at IF=1 mA; 0.72 V typ at IF=10 mA; 0.90 V and 1.20 V max at IF=100 mA; (2)reverse current, IR: 0.1A max at VR=30 V; 0.5A max at VR=80 V; (3)total capacitance, CT: 0.9 pF typ and 3.0 pF max at VR=0, f=1 MHz; (4)reverse recovery time, fT: 1.6 ns typ and 4.0 ns max at IF=10 mA.