Features: · Small package· Low forward voltage : VF = 0.92V (typ.)· Fast reverse recovery time : trr = 1.6ns (typ.)· Small total capacitance : CT = 2.2pF (typ.)Specifications Parameter Symbol Ratings Unit Junction Temperature Tj 125 Storage...
1SS360: Features: · Small package· Low forward voltage : VF = 0.92V (typ.)· Fast reverse recovery time : trr = 1.6ns (typ.)· Small total capacitance : CT = 2.2pF (typ...
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Parameter | Symbol | Ratings | Unit |
Junction Temperature | Tj | 125 | |
Storage Temperature | Tstg | −55∼125 | |
Maximum (peak) reverse voltage | VRM | 85 | V |
DC Reverse Voltage | VR | 80 | V |
Mean Rectifying Current | IO | 100* | mA |
Maximum (peak) forward current | IFM | 300* | mA |
Surge current (10ms) | IFSM | 2* | A |
Power dissipation | P | 100 | mW |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* Unit rating. Total rating = unit rating * 1.5