Features: Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits 1SS358-applied equipment to be made smaller. Small interterminal capacitance (C=0.45pF typ). Low forward voltage and excellent detection effi-ciency (VF =0.35V max). High breakdow...
1SS358: Features: Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits 1SS358-applied equipment to be made smaller. Small interterminal capacitance (C...
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DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
Parameter | Symbol | Conditions | Ratings | Unit |
Peak Reverse Voltage | VR | 55 | V | |
Foward Current | IF | 10 | mA | |
Power Dissipation | P | 150 | mW | |
Junction Temperature | TJ | 125 | ||
Storage Temperature | Tstg | 55 to +125 | ||
Reverse Buming | Bo | C=25pF | 2 | erg |