Features: Small surface mounting type. (UMD2)High reliability.ApplicationHigh frequency switchingPinoutSpecifications Parameter Symbol Limits Unit DC reverse voltage VR 35 V DC forward current IF 100 mA Junction temperat TJ 125 °C Storage temperature TStg 55~+125 °...
1SS356: Features: Small surface mounting type. (UMD2)High reliability.ApplicationHigh frequency switchingPinoutSpecifications Parameter Symbol Limits Unit DC reverse voltage VR 35 V DC for...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
Parameter | Symbol | Limits | Unit |
DC reverse voltage | VR | 35 | V |
DC forward current | IF | 100 | mA |
Junction temperat | TJ | 125 | °C |
Storage temperature | TStg | 55~+125 | °C |
The 1SS400TE61 is designed as one kind of band switching diode device that can be used in high frequency switching applications. And the construction of this device is Silicon epitaxial planar. Features of 1SS400TE61 are:(1)Small surface mounting type. (UMD2); (2)High reliability.
The absolute maximum ratings of the 1SS400TE61 can be summarized as:(1)DC reverse voltage: 35 V;(2)DC forward current: 100 mA;(3)Peak forward current: 100 mA;(4)Mean rectifying current: 100 mA;(5)Surge current (1s): 500 mA;(6)Junction temperature: 125 °C;(7)Storage temperature: -55 to +125 °C.
The electrical characteristics of 1SS400TE61 can be summarized as:(1)Forward voltage: 1.0 V;(2)Reverse current: 10 nA;(3)Capacitance between terminals: 1.2 pF;(4)Forward operating resistance: 0.9 . If you want to know more information such as the electrical characteristics about the 1SS400TE61, please download the datasheet in www.seekic.com or www.chinaicmart.com.