1SS355T1G

The 1SS355T1G is designed as one kind of band switching diode device that can be used in high frequency switching applications. And the construction of this device is Silicon epitaxial planar. Features of 1SS355T1G are:(1)Small surface mounting type; (2)High Speed.(trr=1.2ns Typ.); (3)High reliability with high surge current handling capability; (4)Pb-Free package is available.

The absolute maximum ratings of the 1SS355T1G can be summarized as:(1)DC reverse voltage: 90 V;(2)DC reverse voltage: 80 V;(3)Peak forward current: 225 mA;(4)Mean rectifying current: 100 mA;(5)Surge current (1s): 500 mA;(6)Junction temperature: 125 °C;(7)Storage temperature: -55 to +125 °C.

The electrical characteristics of 1SS355T1G can be summarized as:(1)Forward voltage: 1.2 V;(2)Reverse current: 0.1 uA (VR = 80V);(3)Capacitance between terminals: 3.0 pF (VR=0.5V, f=1MHz);(4)Reverse recovery time: 4 ns (VR=6V, IF=10mA, RL=100). If you want to know more information such as the electrical characteristics about the 1SS355T1G, please download the datasheet in www.seekic.com or www.chinaicmart.com.