Diodes (General Purpose, Power, Switching) Switching diode 200 mW
1SS355: Diodes (General Purpose, Power, Switching) Switching diode 200 mW
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DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
Paremeter | Symbol | Rating | Unit |
Peak reverse voltage | VRM | 40 | V |
DC reverse voltage | VR | 35 | V |
Average forward current | Io | 100 | mA |
Peak forward current | IFM | 255 | mA |
Surge current (1s) | Isurge | 400 | mA |
Junction Temperature | Tj | 125 | |
Storage Temperature | Tstg | -55 to+ 125 |
The 1SS355 is a application of high speed switching.
The 1SS355 has some unique features:(1)ultra small mold type(UMD2);(2)high reliability.
1SS355 also has some outstanding absolute maximun ratings(Ta=25°C) and electrical characteristics(Ta=25°C).Absolute maximun ratings:(1): reverse voltage (repetitive peak) is 90 V(DC);(2)reverse voltage is 80 V;(3)forward voltage(re-petitive peak) is 225 mA;(4)average rectified forward current is 100 mA;(5)surge current is 500 mA;(6)junction te-mperature is 150°C;(7)storage temperrature is -55°C to +150°C. electrical characteristics:(1):forward voltage is 1.2 V max when IF is100mA;(2):reverse current is 0.1 uA max when VR is 80 V;(3):capacitance between terminals is 3 pF max when VR is 0.5V and f is 1MHz;(4):reverse recovery time is 4 ns max when VR is 6V,IF is 10mA and RL is 100 .