Features: Small interterminal capacitance (C=0.69pF typ).Low forward voltage (VF=0.23V max).High breakdown voltage (VR=55V).Very small-sized package permitting the 1SS350-applied sets to be made small and slim.PinoutSpecifications Parameter Symbo l Value Unit Reverse Voltage VR...
1SS350: Features: Small interterminal capacitance (C=0.69pF typ).Low forward voltage (VF=0.23V max).High breakdown voltage (VR=55V).Very small-sized package permitting the 1SS350-applied sets to be made sma...
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DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
Parameter |
Symbo l |
Value |
Unit |
Reverse Voltage |
VR |
5 |
V |
Forward Current |
IF |
30 |
mA |
Junction Tem perature |
Tj |
125 |
|
Storage tem perature |
Tstg |
-55 to +125 |
|
Absolute maximum ratings | |
---|---|
VR *VRM [V] | 5* |
IF [mA] | 30 |
P [mW] | - |
Electrical characteristics | |
---|---|
VF max [mV] | 230 |
IF [mA] | 1 |
IR max [µA] | 25 |
VR [V] | 0.5 |
C typ *max [pF] | 0.69 |
VR [V] | 0.2 |
f [MHz] | 1 |
The 1SS350 is designed as one kind of silicon epitaxial schottky barrier diode device that can be used in UHF detector, mixer applications. Features of the 1SS350 are:(1)Small interterminal capacitance (C=0.69pF typ); (2)Low forward voltage (VF=0.23V max); (3)Very small-sized package permitting the 1SS350- applied sets to be made small and slim.
The absolute maximum ratings of the 1SS350 can be summarized as:(1)Peak Reverse Voltage: 5 V;(2)Forward Current: 30 mA;(3)Junction Temperature: 125 °C;(4)Storage Temperature: -55 °C to +125 °C.
The electrical characteristics of 1SS350 can be summarized as:(1)Forward Voltage: 0.23 V;(2)Forward Current: 30 mA;(3)Reverse Current: 25 A;(4)Interterminal Capacitance: 0.69 to 0.9 pF. If you want to know more information such as the electrical characteristics about the 1SS350, please download the datasheet in www.seekic.com or www.chinaicmart.com.