Features: `Low forward voltage : VF (3) = 0.56V (typ.)`Low reverse current : IR = 5A (max)`Small package : SC-59Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA ...
1SS348: Features: `Low forward voltage : VF (3) = 0.56V (typ.)`Low reverse current : IR = 5A (max)`Small package : SC-59Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse V...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
Characteristic | Symbol | Rating | Unit |
Maximum (peak) reverse Voltage | VRM | 85 | V |
Reverse voltage | VR | 80 | V |
Maximum (peak) forward current | IFM | 300 | mA |
Average forward current | IO | 100 | mA |
Power dissipation | P | 200 | mW |
Junction temperature | Tj | 125 | |
Storage temperature range | Tstg | -55~125 | |
Operating temperature range | Topr | -40~100 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).