Features: Small interterminal capacitance (C=0.45pF typ). Low forward voltage and excellent detection efficiency (VF=0.35V max) High breakdown voltage (VR=55V).Very small-sized package permitting the 1SS345- applied sets to be made small and slim.Pinout Specifications Absolute maximu...
1SS345: Features: Small interterminal capacitance (C=0.45pF typ). Low forward voltage and excellent detection efficiency (VF=0.35V max) High breakdown voltage (VR=55V).Very small-sized package permitting t...
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DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
Absolute maximum ratings | |
---|---|
VR *VRM [V] | 55 |
IF [mA] | 10 |
P [mW] | 150 |
Electrical characteristics | |
---|---|
VF max [mV] | 350 |
IF [mA] | 1 |
IR max [µA] | 50 |
VR [V] | 40 |
C typ *max [pF] | 0.45 |
VR [V] | 10 |
f [MHz] | 1 |
Item | Symbol | Conditions | Value | Unit |
Reverse voltage | VR | 55 | V | |
Forward current | IF | 10 | mA | |
Power dissipation | PD | 150 | mW | |
Junction temperature | TJ | 125 | °C | |
Storage temperature | Tstg | 55 to +125 | °C | |
Reverse Burning | BO | (C=25pF) | 2 | erg |