Features: `Small packag`Small Total capacitance: CT = 1.2pF(Max.)`Low series resistance: rs = 0.5 (Typ.)Specifications Parameter Symbol Value Unit Reverse Voltage VR 30 V Forward Current IF 100 mA Junction Temperature TJ 125 Storage Temperature Range Tstg -55 to +12...
1SS314: Features: `Small packag`Small Total capacitance: CT = 1.2pF(Max.)`Low series resistance: rs = 0.5 (Typ.)Specifications Parameter Symbol Value Unit Reverse Voltage VR 30 V Forward Cu...
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Parameter | Symbol | Value | Unit |
Reverse Voltage | VR | 30 | V |
Forward Current | IF | 100 | mA |
Junction Temperature | TJ | 125 | |
Storage Temperature Range | Tstg | -55 to +125 |
The 1SS314 is designed as one kind of TOSHIBA diode silicon epitaxial planar type device that can be used in VHF tuner band switch applications. Features of 1SS314 are:(1)small package;(2)small total capacitance: CT = 1.2 pF (max.);(3)low series resistance: rs = 0.5 (typ.).
The absolute maximum ratings of the 1SS314 can be summarized as:(1)maximum (peak) reverse voltage: 30 V;(2)reverse voltage: 30 V;(3)maximum (peak) forward current: 100 mA;(4)average forward current: 100 mA;(5)power dissipation: 200 mW;(6)junction temperature: 125 ;(7)storage temperature: -55 to +125 ;(8)operating temperature range: -40 to +100 .
The electrical characteristics of 1SS314 can be summarized as:(1)forward voltage: 0.85 V;(2)reverse current: 0.1 uA;(3)total capacitance: 0.7 to 1.2 pF;(4)reverse voltage: 30 V;(5)series resistance: 0.5 to 0.9 . If you want to know more information such as the electrical characteristics about the 1SS314, please download the datasheet in www.seekic.com or www.chinaicmart.com.