Application ·Low forward voltage : VF = 0.94V (typ.) ·High voltage : VR = 400V (min) ·Fast reverse recovery time : trr = 1.5ns (typ.) ·Small total capacitance : CT = 3.2pF (typ.) ·Small package : SC−59Specifications Characteristic Symbo...
1SS311: Application ·Low forward voltage : VF = 0.94V (typ.) ·High voltage : VR = 400V (min) ·Fast reverse recovery time : trr = 1.5ns (typ.) ·Small total capacitance...
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DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
Characteristic | Symbol | Rating | Unit |
Maximum (peak) reverse voltage | VRM | 420 | V |
Reverse voltage | VR | 400 | V |
Maximum (peak) forward current | IFM | 300 | mA |
Average forward current | IO | 100 | mA |
Surge current (10 ms) | IFSM | 2 | A |
Power dissipation | P | 150 | mW |
Junction temperature | Tj | 125 | |
Storage temperature | Tstg | −55~125 |