Features: Low forward voltage: VF (3) = 0.92V (typ.)Fast reverse recovery time:trr = 1.6ns(typ.)Small total Capacitance:CT = 2.2pF(typ.)Specifications Paramete Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V MMaximum (peak...
1SS308: Features: Low forward voltage: VF (3) = 0.92V (typ.)Fast reverse recovery time:trr = 1.6ns(typ.)Small total Capacitance:CT = 2.2pF(typ.)Specifications Paramete Symbol Rating Unit Ma...
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DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
Paramete |
Symbol |
Rating |
Unit |
Maximum (peak) reverse voltage |
VRM |
85 |
V |
Reverse voltage |
VR |
80 |
V |
MMaximum (peak) forward current |
IFM |
300(1) |
mA |
Average forward current |
IO |
100(1) |
mA |
Surge current (10 ms) |
IFSM |
2(1) |
A |
Power dissipation |
P |
200 |
mW |
Junction temperature |
Tj |
125 |
|
Storage temperature range |
Tstg |
-55 to + 150 |
|