Features: ·Low forward voltage :VF =1.0 V(Typ)·Low reverse Current :IR= 0.1 nA (Typ)·Small total capacitance :CT = 3.0 pF(Typ)Specifications Parameter Symbol Rating Unit Maximum (peak) reverse voltageReverse voltageAverage forward currentMaximum (peak) forward currentSurge cur...
1SS307: Features: ·Low forward voltage :VF =1.0 V(Typ)·Low reverse Current :IR= 0.1 nA (Typ)·Small total capacitance :CT = 3.0 pF(Typ)Specifications Parameter Symbol Rating Unit Maximum...
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DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
Parameter |
Symbol |
Rating |
Unit |
Maximum (peak) reverse voltage Reverse voltage Average forward current Maximum (peak) forward current Surge current (10 ms) Power dissipation Junction Temperature Storage Temperature |
V RM V R I O I FM I FSM P T j Tstg |
35 30 100 300 2 150 125 -55 + 125 |
V V mA mA A mW |