Features: ·Low forward voltage :VF(2) = 0.9 V(Typ)·Fast reverse recovery time :trr = 30 ns (Typ)·Small total capacitance :CT = 1.5 pF(Typ)Specifications Parameter Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltageAverage forward current *Maximum (peak) forward c...
1SS306: Features: ·Low forward voltage :VF(2) = 0.9 V(Typ)·Fast reverse recovery time :trr = 30 ns (Typ)·Small total capacitance :CT = 1.5 pF(Typ)Specifications Parameter Symbol Rating Unit ...
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DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
Parameter |
Symbol |
Rating |
Unit |
Maximum (peak) reverse voltage Reverse voltage Average forward current * Maximum (peak) forward current * Surge current (10 ms) * Power dissipation Junction Temperature Storage Temperature |
VRM VR IO IFM IFSM P Tj Tstg |
250 200 100 300 2 150 125 -55 + 125 |
V V mA mA A mW |