Features: Low forward voltage:VF(3) = 0.9 V(Typ)Fast reverse recovery time:trr = 1.6 ns (Typ)Small total capacitance:CT = 0.9 pF(Typ)Specifications Parameter Symbol Rating Unit Maximum(peak) reverse voltageReverse voltageMaximum(peak) fo rward currentAverage forwa rd currentSurg...
1SS302: Features: Low forward voltage:VF(3) = 0.9 V(Typ)Fast reverse recovery time:trr = 1.6 ns (Typ)Small total capacitance:CT = 0.9 pF(Typ)Specifications Parameter Symbol Rating Unit Ma...
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Parameter |
Symbol |
Rating |
Unit |
Maximum(peak) reverse voltage Reverse voltage Maximum(peak) fo rward current Average forwa rd current Surge current(10m s) Power dissip ation Junction Temperatu re Storage Temperature |
VRM VR IFM IO IFSM P Tj Tstg |
85 80 300(*) 100(*) 2(*) 100 125 -55 to +125 |
V V mA mA A mW |
The 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devide that can be used in ultra high speed switching applications. Features of the 1SS302 are:(1)Small package: SC-70; (2)Low forward voltage: VF (3) = 0.90 V (typ.); (3)Fast reverse recovery time: trr = 1.6 ns (typ.); (4)Small total capacitance: CT = 0.9 pF (typ.).
The absolute maximum ratings of the 1SS302 can be summarized as:(1)Maximum (peak) reverse voltage: 85 V;(2)Reverse voltage: 80 V;(3)Maximum (peak) forward current: 300 mA;(4)Average forward current: 100 mA;(5)Surge current (10 ms): 2 A;(6)Power dissipation: 100 mW;(7)Junction temperature: 125 °C;(8)Storage temperature: -55 to 125 °C.
The electrical characteristics of 1SS302 can be summarized as:(1)Forward voltage: 0.6 to 1.20 V;(2)Reverse current: 0.1 or 0.5 uA;(3)Total capacitance: 0.9 3.0 pF;(4)Reverse recovery time: 1.6 to 4.0 ns. If you want to know more information about 1SS302, please download the datasheet in www.seekic.com or www.chinaicmart.com .