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VND670SP13TR, VND7N04-1, VND7N04-1-E

Table of contents:
Info of VND670SP13TR
Info of VND7N04-1
Info of VND7N04-1-E

VND670SP13TR, VND7N04-1, VND7N04-1-E Selling Leads, Datasheet

MFG:STMicroelectronics Category:Integrated Circuits (ICs) Package Cooled:SOP-10 D/C:05+

VND670SP13TR, VND7N04-1, VND7N04-1-E Datasheet download

Five Points

Part Number: VND7N04-1

Category: Integrated Circuits (ICs)

MFG: STMicroelectronics

Package Cooled: SOP-10

D/C: 05+

Description: MOSFET OMNIFET 42V 7A IPAK

Price Break

600

Unit Price

3.74080

Extended Price

2244.48

(All prices are in USD) Prices for reference only

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VND670SP13TR Parameters

Technical/Catalog Information	VND670SP13TR
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	PowerSO-10 Exposed Bottom Pad
Mounting Type	Surface Mount
Type	High Side
Voltage - Supply	5.5 V ~ 36 V
On-State Resistance	26 mOhm
Current - Output / Channel	15A
Current - Peak Output	45A
Packaging	Tape & Reel (TR)
Input Type	Non-Inverting
Number of Outputs	2
Operating Temperature	-40°C ~ 150°C
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VND670SP13TR VND670SP13TR

VND7N04-1 Parameters

Technical/Catalog Information	VND7N04-1
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
Mounting Type	Through Hole
Type	Low Side
Voltage - Supply	-
On-State Resistance	60 mOhm
Current - Output / Channel	-
Current - Peak Output	7A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VND7N04 1 VND7N041

VND7N04-1 General Description

The VND7N04, VND7N04-1, VNP7N04FI and VNK7N04FM are monolithic devices made using STMicroeletronics VIPower M0 Technology,intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Fault feedback can be detected by monitoring the voltage at the input pin.

VND7N04-1 Maximum Ratings

Symbol	Parameter	Value			Unit
		DPAK IPAK	ISOWATT220	SOT-82FM
V_DS	Drain-source Voltage (Vin = 0)	Internally Clamped			V
V_IN	Input Voltage	18			V
I_D	Drain Current	Internally Clamped			A
I_R	Reverse DC Output Current	-7			A
V_esd	Electrostatic discharge(C= 100 pF, R=1.5 K)	2000			V
P_tot	Total Dissipation at T_C=25°C	60	24	9	W
T_j	Operating Junction Temperature	Internally Limited
T_C	Case operating temperature	Internally Limited
T_stg	Storage Temperature	-55 to 150

VND7N04-1 Features

During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (I_iss) flows into the Input pin in order to supply the internal circuitry.

The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T_jsh.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensine element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC.

- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W.The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in R_DS(on).

VND7N04-1-E Parameters

Technical/Catalog Information	VND7N04-1-E
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
Mounting Type	Through Hole
Type	Low Side
Voltage - Supply	-
On-State Resistance	60 mOhm
Current - Output / Channel	-
Current - Peak Output	9A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VND7N04 1 E VND7N041E

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