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VND10N06-1, VND14N04, VND14NV04

Table of contents:
Info of VND10N06-1
Info of VND14N04
Info of VND14NV04

VND10N06-1, VND14N04, VND14NV04 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Integrated Circuits (ICs) Package Cooled:TO-251 D/C:99+

VND10N06-1, VND14N04, VND14NV04 Datasheet download

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Part Number: VND10N06-1

Category: Integrated Circuits (ICs)

MFG: STMicroelectronics

Package Cooled: TO-251

D/C: 99+

Description: MOSFET N-CH 40V 12A DPAK

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VND10N06-1 Parameters

Technical/Catalog Information	VND10N06-1
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
Mounting Type	Through Hole
Type	Low Side
Voltage - Supply	-
On-State Resistance	150 mOhm
Current - Output / Channel	-
Current - Peak Output	10A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VND10N06 1 VND10N061

VND10N06-1 General Description

The VND10N06, VND10N06-1, VNP10N06FI and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

VND10N06-1 Maximum Ratings

Symbol	Parameter	Value			Unit
		DPAK IPAK	ISOWATT220	SOT82-FM
V_DS	Drain-source Voltage (Vin = 0)	Internally Clamped			V
V_IN	Input Voltage	Internally Clamped			V
I_in	Input Current	±20			mA
I_D	Drain Current	Internally Clamped			A
I_R	Reverse DC Output Current	-15			A
V_esd	Electrostatic discharge(C= 100 pF, R=1.5 K)	4000			V
P_tot	Total Dissipation at T_C=25°C	35	27	9	W
T_j	Operating Junction Temperature	Internally Limited
T_C	Case operating temperature	Internally Limited
T_stg	Storage Temperature	-55 to 150

VND10N06-1 Features

During Normal Operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path as soon as V_IN > V_IH.

The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user's standpoint is that a small DC current (typically 150 mA) flows into the INPUT pin in order to supply the internal circuitry.

During turn-off of an unclamped inductive load the output voltage is clamped to a safe level by an integrated Zener clamp between DRAIN pin and the gate of the internal Power MOSFET.

In this condition, the Power MOSFET gate is set to a voltage high enough to sustain the inductive load current even if the INPUT pin is driven to 0V. The device integrates an active current limiter circuit which limits the drain current I_D to Ilim whatever the INPUTpin Voltage.

When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the heatsinking capability. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T_jsh.

If T_j reaches T_jsh, the device shuts down whatever the INPUT pin voltage. The device will restart automatically when T_j has cooled down to T_jrs

VND14NV04 Parameters

Technical/Catalog Information	VND14NV04
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Mounting Type	Surface Mount
Type	Low Side
Voltage - Supply	-
On-State Resistance	35 mOhm
Current - Output / Channel	-
Current - Peak Output	18A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VND14NV04 VND14NV04 497 2674 5 ND 49726745ND 497-2674-5

VND14NV04 General Description

The VNB14NV04, VND14NV04, VND14NV04-1,VNP14NV04, VNS14NV04, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation |and overvoltage clamp protect the chip in harsh environments.

Fault feedback can be detected by monitoring the voltage at the input pin.

VND14NV04 Maximum Ratings

Symbol	Parameter	Value					Unit
		SO-8	DPAK	TO-220	IPAK	D²PAK
V_DS	Drain-source Voltage (V_IN = 0)	Internally Clamped					V
V_IN	Input Voltage	Internally Clamped					V
I_IN	Input Current	+/-20					mA
R_IN _MIN	Minimum Input Series Impedance	10
I_D	Drain Current	Internally Clamped					A
I_R	Reverse DC Output Current	-15					A
V_ESD1	Electrostatic discharge(R=1.5 K,C= 100 pF)	4000					V
V_ESD2	Electrostatic Discharge on output pin only R=330, C=150pF)	16500					V
P_tot	Total Dissipation at T_C=25°C	4.6	74	74	74	74	W
E_MAX	Maximum Switching Energy (L=0.4mH; R_L=0; V_bat=13.5V; T_jstart=150ºC; I_L=18A)		93			93	mJ
T_j	Operating Junction Temperature	Internally Limited
T_C	Case operating temperature	Internally Limited
T_stg	Storage Temperature	-55 to 150

VND14NV04 Features

During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path.The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user's standpoint is that a small DC current II_SS (typ.100mA) flows into the INPUT pin in order to supply the internal circuitry.

The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT:limits the drain current ID to Ilim whatever the INPUT pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough,junction temperature may reach the overtemperature threshold T_jsh.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION:these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15 C below shut-down temperature.

- STATUS FEEDBACK:in the case of an overtemperature fault condition (T_j> T_jsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V. This will not however affect the device operation:no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current I_ISS.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.

VND14NV04 Connection Diagram

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