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The VND5N07, VND5N07-1, VNP5N07FI and VNK5N07FM are monolithic devices made using STMicroelectronics VIPower M0 Technology,intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
VND5N07 Maximum Ratings
Symbol
Parameter
Value
Unit
DPAK IPAK
ISOWATT220
SOT-82FM
VDS
Drain-source Voltage (Vin = 0)
Internally Clamped
V
VIN
Input Voltage
18
V
ID
Drain Current
Internally Clamped
A
IR
Reverse DC Output Current
-7
A
Vesd
Electrostatic discharge(C= 100 pF, R=1.5 K)
2000
V
Ptot
Total Dissipation at TC=25°C
60
24
9
W
Tj
Operating Junction Temperature
Internally Limited
TC
Case operating temperature
Internally Limited
Tstg
Storage Temperature
-55 to 150
VND5N07 Features
LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET