VFQ-3C, VFT150-28, VFT150-50 Selling Leads, Datasheet
MFG:DATEL Package Cooled:DIP D/C:ASI
VFQ-3C, VFT150-28, VFT150-50 Datasheet download
Part Number: VFQ-3C
MFG: DATEL
Package Cooled: DIP
D/C: ASI
VFQ-3C, VFT150-28, VFT150-50
- Table of contents:
Info of VFQ-3C
Info of VFT150-28
Info of VFT150-50
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About VFQ-1C
PDF/DataSheet Download
Datasheet: VFQ-1C
File Size: 162432 KB
Manufacturer:
Download : Click here to Download
About VFT150-28
PDF/DataSheet Download
Datasheet: VFT150-28
File Size: 19266 KB
Manufacturer: ASI [Advanced Semiconductor]
Download : Click here to Download
About VFT150-50
PDF/DataSheet Download
Datasheet: VFT150-50
File Size: 19312 KB
Manufacturer: ASI [Advanced Semiconductor]
Download : Click here to Download
VFT150-28 General Description
The VFT150-28 is Designed for General Purpose Class B Power Amplifier Applications up to 175 MHz.
VFT150-28 Maximum Ratings
| ID | 16 A |
| VDSS | 65 V |
| VGS | ±40V |
PDISS |
300 W @ TC = 25 °C |
| TJ |
-65 °C to +200 °C |
| TSTG | -65 °C to +150 °C |
| JC |
0.6 °C/W |
VFT150-28 Features
·PG = 10 dB Typical at 175 MHz
·10:1 Load VSWR Capability
·OmnigoldTM Metalization System
VFT150-50 General Description
The VFT150-50 is a N-Channel Enhancement Mode RF Power MOSFET Designed for AM/FM Power Amplifier Applications up to 175 MHz.
VFT150-50 Maximum Ratings
| ID | 16A |
| VDSS | 125 V |
| VGS | ±30 V |
PDISS |
300W @ TC = 25 °C |
| TJ |
-65 °C to +200 °C |
| TSTG | -65 °C to +150 °C |
| JC |
0.6 °C/W |
VFT150-50 Features
· PG = 13.5 dB Typical at 175 MHz
· 10:1 Load VSWR Capability
· OmnigoldTM Metalization System
· 10:1 Load VSWR Capability
· OmnigoldTM Metalization System
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