VF10150C, VF10150C-E3/4W, VF10150S Selling Leads, Datasheet
MFG:Vishay Package Cooled:ITO-220AB D/C:2010+
VF10150C, VF10150C-E3/4W, VF10150S Datasheet download
Part Number: VF10150C
MFG: Vishay
Package Cooled: ITO-220AB
D/C: 2010+
VF10150C, VF10150C-E3/4W, VF10150S
- Table of contents:
Info of VF10150C
Info of VF10150C-E3/4W
Info of VF10150S
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About VF194H1.54M
PDF/DataSheet Download
Datasheet: VF194H1.54M
File Size: 215585 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About VF194H1.54M
PDF/DataSheet Download
Datasheet: VF194H1.54M
File Size: 215585 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About VF194H1.54M
PDF/DataSheet Download
Datasheet: VF194H1.54M
File Size: 215585 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
VF10150C General Description
V10150C, VF`10150C, VB10150C & VI10150C datasheet
VF10150C Maximum Ratings
| PARAMETER | SYMBOL | V40150C | VF40150C | VB40150C | VI40150C | UNIT |
| Maximum repetitive peak reverse voltage | VRRM | 150 | V | |||
| Maximum average forward rectified current (Fig. 1)per device per diode |
IF(AV) | 10 5 |
A | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM | 60 | A | |||
| Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 min |
VAC | 1500 | V | |||
| Operating junction and storage temperature range | TJ, TSTG | - 55 to + 150 | ||||
VF10150C Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power osses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF aximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB nd TO-262AA package)
• Component in accordance to RoHS 2002/95/EC nd WEEE 2002/96/EC
• Low forward voltage drop, low power osses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF aximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB nd TO-262AA package)
• Component in accordance to RoHS 2002/95/EC nd WEEE 2002/96/EC
VF10150C Typical Application
For use in high frequency inverters, switching power upplies, freewheeling diodes, OR-ing diode, dc-to-dc onverters and reverse battery protection.
VF10150S General Description
V10150S, VF10150S, VB10150S & VI10150S datasheet
VF10150S Maximum Ratings
| PARAMETER | SYMBOL | V10150S | VF10150S | VB10150S | VI10150S | UNIT |
| Maximum repetitive peak reverse voltage | VRRM | 150 | V | |||
| Maximum average forward rectified current (Fig. 1) |
IF(AV) | 10 | A | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM | 120 | A | |||
| Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 min |
VAC | 1500 | V | |||
| Operating junction and storage temperature range | TJ, TSTG | - 40 to + 150 | ||||
VF10150S Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VF10150S Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
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