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VF10150C

Features: • Trench MOS Schottky technology• Low forward voltage drop, low power osses• High efficiency operation• Meets MSL level 1, per J-STD-020, LF aximum peak of 245 °C (for TO-263AB package)• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB nd TO-262AA package)&#...

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VF10150C: Features: • Trench MOS Schottky technology• Low forward voltage drop, low power osses• High efficiency operation• Meets MSL level 1, per J-STD-020, LF aximum peak of 245 °C (...

VF10150C Data Sheet

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Part Number:
VF10150C
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Trench MOS Schottky technology
• Low forward voltage drop, low power osses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF aximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB nd TO-262AA package)
• Component in accordance to RoHS 2002/95/EC nd WEEE 2002/96/EC




Application

For use in high frequency inverters, switching power upplies, freewheeling diodes, OR-ing diode, dc-to-dc onverters and reverse battery protection.






Specifications

PARAMETER SYMBOL V40150C VF40150C VB40150C VI40150C UNIT
Maximum repetitive peak reverse voltage VRRM 150 V
Maximum average forward rectified current
(Fig. 1)per device
per diode
 IF(AV) 10
5		 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
 IFSM 60 A
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min		 VAC 1500 V
Operating junction and storage temperature range TJ, TSTG - 55 to + 150





Description

V10150C, VF`10150C, VB10150C & VI10150C datasheet




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