VB30120SG, VB30150C, VB30200C Selling Leads, Datasheet
MFG:Vishay Package Cooled:TO-263AB D/C:2010+
VB30120SG, VB30150C, VB30200C Datasheet download
Part Number: VB30120SG
MFG: Vishay
Package Cooled: TO-263AB
D/C: 2010+
VB30120SG, VB30150C, VB30200C
- Table of contents:
Info of VB30120SG
Info of VB30150C
Info of VB30200C
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About VB325
PDF/DataSheet Download
Datasheet: VB325
File Size: 194736 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About VB325
PDF/DataSheet Download
Datasheet: VB325
File Size: 194736 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About VB325
PDF/DataSheet Download
Datasheet: VB325
File Size: 194736 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
VB30120SG General Description
V30120SG, VF30120SG, VB30120SG & VI30120SG datasheet
VB30120SG Maximum Ratings
| PARAMETER | SYMBOL |
V30120SG |
VF30120SG |
VB30120SG |
VI30120SG |
UNIT |
| Maximum repetitive peak reverse voltage | VRRM |
120 |
V | |||
| Maximum average forward rectified current (Fig. 1) | VF(AV) |
30 |
V | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM |
225 |
A | |||
| Isolation voltage (ITO-220AC only) from terminals to heatsink t = 1 min |
VAC |
1500 |
V | |||
| Operating junction and storage temperature range | TJ, TSTJ |
-40 to + 150 |
||||
VB30120SG Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VB30120SG Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
VB30150C General Description
V30150C, VF30150C, VB30150C & VI30150C datasheet
VB30150C Maximum Ratings
| PARAMETER | SYMBOL |
V30150C |
VF30150C |
VB30150C |
VI30150C |
UNIT |
| Maximum repetitive peak reverse voltage | VRRM |
150 |
V | |||
| Maximum average forward rectified current (Fig. 1) | VF(AV) |
30 15 |
V | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM |
140 |
A | |||
| Isolation voltage (ITO-220AC only) from terminals to heatsink t = 1 min |
VAC |
1500 |
V | |||
| Operating junction and storage temperature range | TJ, TSTJ |
-55 to + 150 |
||||
VB30150C Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
VB30200C General Description
V30200C, VF30200C, VB30200C & VI30200C datasheet
VB30200C Maximum Ratings
|
PARAMETER |
SYMBOL |
V30200C |
VB30200C |
VI30200C |
UNIT |
| Maximum repetitive peak reverse voltage |
VRRM |
200 |
V | ||
| Maximum average forward rectified current (Fig. 1) per device per diode |
IF(AV) |
30 15 |
A | ||
| Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode |
IFSM |
250 |
A | ||
| Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 |
EAS |
100 |
mJ | ||
| Peak repetitive reverse current at tp = 2 s, 1 kHz per diode |
IRRM |
1.0 |
A | ||
| Voltage rate of change (rated VR) |
dv/dt |
10000 |
V/s | ||
| Operating junction and storage temperature range |
TJ,TSTG |
- 40 to + 150 |
|||
VB30200C Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260, 40 s (for TO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260, 40 s (for TO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VB30200C Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
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