UF62V-01, UF630, UF634CC Selling Leads, Datasheet
MFG:HCH Package Cooled:NEW AND ORIGINAL D/C:08+/09+
UF62V-01, UF630, UF634CC Datasheet download
Part Number: UF62V-01
MFG: HCH
Package Cooled: NEW AND ORIGINAL
D/C: 08+/09+
MFG:HCH Package Cooled:NEW AND ORIGINAL D/C:08+/09+
UF62V-01, UF630, UF634CC Datasheet download
MFG: HCH
Package Cooled: NEW AND ORIGINAL
D/C: 08+/09+
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PDF/DataSheet Download
Datasheet: UF600
File Size: 160275 KB
Manufacturer: TRSYS [TRSYS]
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PDF/DataSheet Download
Datasheet: UF630L-TA3-T
File Size: 181136 KB
Manufacturer: Unisonic Technologies
Download : Click here to Download
PDF/DataSheet Download
Datasheet: UF600
File Size: 160275 KB
Manufacturer: TRSYS [TRSYS]
Download : Click here to Download
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
PARAMETER | SYMBOL | RATINGS | UNIT | |
Drain to Source Voltage (TJ =25~125) | VDS | 200 | V | |
Drain to Gate Voltage (RGS = 20k, TJ =25~125) | VDGR | 200 | V | |
Gate to Source Voltage | VGS | ±20 | V | |
Drain Current | Continuous | ID | 9 | A |
Ta = 100 | 6 | A | ||
Pulsed | 36 | A | ||
Maximum Power Dissipation (Ta = 25) Derating above 25 |
PD | 75 0.6 |
W W/`` | |
Single Pulse Avalanche Energy Rating (VDD=20V, starting TJ =25, L=3.37mH, RG=50, peak IAS = 9A) |
EAS | 150 | mJ | |
Operation and Storage Temperature | TJ, TSTG | -40 ~ +150 | `` |
Note: 1.Signified recommend operating range that indicates conditions for which the device is intended to be
functional, but does not guarantee specific performance limits.
2.Absolute maximum ratings indicate limits beyond which damage to the device may occur.