Features: `RDS(ON) =0.18@VGS = 10V.`Ultra Low gate charge (typical 43nC)`Low reverse transfer capacitance (CRSS = typical 100 pF)`Fast switching capability`Avalanche energy specified`Improved dv/dt capability, high ruggednessSpecifications PARAMETER SYMBOL RATINGS UNIT DrainSo...
UF640: Features: `RDS(ON) =0.18@VGS = 10V.`Ultra Low gate charge (typical 43nC)`Low reverse transfer capacitance (CRSS = typical 100 pF)`Fast switching capability`Avalanche energy specified`Improved dv/dt ...
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PARAMETER | SYMBOL | RATINGS | UNIT | |
DrainSource Voltage | VDS | 200 | V | |
DrainGate Voltage (RGS = 20k) | VDGR | 200 | V | |
GateSource Voltage | VGS | ±20 | V | |
Continuous Drain Current`` | TC = 25 | ID | 18 | A |
TC = 100`` | 11 | A | ||
Pulsed Drain Current (Note``) | PD | 72 | A | |
Single Pulse Avalanche Energy Rating (Note``) | EAS | 580 | mJ | |
Maximum Power Dissipation | PD | 125 | `` | |
Dissipation Derating Factor | 10 | W | ||
Junction Temperature | TJ | +150 | W/`` | |
Storage Temperature | TSTG | -55 ~ +150 | `` |