TSHG5210, TSHG5410, TSHG5510 Selling Leads, Datasheet
MFG:Vishay Package Cooled:Leaded D/C:2010+
TSHG5210, TSHG5410, TSHG5510 Datasheet download
Part Number: TSHG5210
MFG: Vishay
Package Cooled: Leaded
D/C: 2010+
TSHG5210, TSHG5410, TSHG5510
- Table of contents:
Info of TSHG5210
Info of TSHG5410
Info of TSHG5510
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About TSH10
PDF/DataSheet Download
Datasheet: TSH10
File Size: 78096 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About TSH10
PDF/DataSheet Download
Datasheet: TSH10
File Size: 78096 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About TSH10
PDF/DataSheet Download
Datasheet: TSH10
File Size: 78096 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
TSHG5210 General Description
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
TSHG5210 Maximum Ratings
| PARAMETER | TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
| Reverse voltage |
VR |
5 |
V | |
| Forward current |
IF |
100 |
mA | |
| Peak forward current | tp/T = 0.5, tp = 100 s |
IFM |
200 |
mA |
| Surge forward current | tp = 100 s |
IFSM |
1 |
A |
| Power dissipation |
PV |
180 |
mW | |
| Junction temperature |
Tj |
100 |
||
| Operating temperature range |
Tamb |
- 40 to + 85 |
||
| Storage temperature range |
Tstg |
- 40 to + 100 |
||
| Soldering temperature | t 5 s, 2 mm from case |
Tsd |
260 |
|
| Thermal resistance junction/ambient | J-STD-051, leads 7 mm, soldered on PCB |
RthJA |
230 |
K/W |
TSHG5210 Features
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): 5
• Leads with stand-off
• Peak wavelength: p = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:= ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 18 MHz
• Good spectral matching with CMOS cameras
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
• Package form: T-1¾
• Dimensions (in mm): 5
• Leads with stand-off
• Peak wavelength: p = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:= ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 18 MHz
• Good spectral matching with CMOS cameras
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
TSHG5210 Typical Application
• Infrared radiation source for operation with CMOS cameras
• High speed IR data transmission
• Smoke-automatic fire detectors
• High speed IR data transmission
• Smoke-automatic fire detectors
TSHG5410 General Description
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
TSHG5410 Maximum Ratings
| PARAMETER | TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
| Reverse voltage |
VR |
5 |
V | |
| Forward current |
IF |
100 |
mA | |
| Peak forward current | tp/T = 0.5, tp = 100 s |
IFM |
200 |
mA |
| Surge forward current | tp = 100 s |
IFSM |
1 |
A |
| Power dissipation |
PV |
180 |
mW | |
| Junction temperature |
Tj |
100 |
||
| Operating temperature range |
Tamb |
- 40 to + 85 |
||
| Storage temperature range |
Tstg |
- 40 to + 100 |
||
| Soldering temperature | t 5 s, 2 mm from case |
Tsd |
260 |
|
| Thermal resistance junction/ambient | J-STD-051, leads 7 mm, soldered on PCB |
RthJA |
230 |
K/W |
TSHG5410 Features
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): 5
• Leads with stand-off
• Peak wavelength: p = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 18°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 18 MHz
• Good spectral matching with CMOS cameras
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
• Package form: T-1¾
• Dimensions (in mm): 5
• Leads with stand-off
• Peak wavelength: p = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 18°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 18 MHz
• Good spectral matching with CMOS cameras
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
TSHG5410 Typical Application
• Infrared radiation source for operation with CMOS cameras
• High speed IR data transmission
• High speed IR data transmission
TSHG5510 General Description
High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero
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