TSHA5203, TSHA5500, TSHA5501 Selling Leads, Datasheet
MFG:Vishay Package Cooled:Leaded D/C:2010+
TSHA5203, TSHA5500, TSHA5501 Datasheet download
Part Number: TSHA5203
MFG: Vishay
Package Cooled: Leaded
D/C: 2010+
TSHA5203, TSHA5500, TSHA5501
- Table of contents:
Info of TSHA5203
Info of TSHA5500
Info of TSHA5501
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About TSHA5203
PDF/DataSheet Download
Datasheet: TSHA5203
File Size: 91296 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About TSHA5500
PDF/DataSheet Download
Datasheet: TSHA5500
File Size: 90863 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About TSHA5501
PDF/DataSheet Download
Datasheet: TSHA5501
File Size: 90863 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
TSHA5203 General Description
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
TSHA5203 Maximum Ratings
| PARAMETER | TEST CONDITION | SYMBOL | VALUE | UNITS |
| Reverse voltage | VR | 5 | V | |
| Forward current | IF | 100 | mA | |
| Peak forward current | tp/T = 0.5, tp = 100 µs | IFM | 200 | mA |
| Surge forward current | tp = 100 µs | IFSM | 2.5 | A |
| Power dissipation | PV | 180 | mW |
TSHA5203 Features
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
TSHA5203 Typical Application
• Infrared remote control and free air data transmission systems
• This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass
TSHA5500 General Description
The TSHA550. series are infrared, 875 nm emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.
TSHA5500 Maximum Ratings
| PARAMETER | TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
| Junction temperature |
Tj |
100 |
||
| Operating temperature range |
Tamb |
- 40 to + 85 |
||
| Storage temperature range |
Tstg |
- 40 to + 100 |
||
| Soldering temperature | t 5 s, 2 mm from case |
Tsd |
260 |
|
| Thermal resistance junction/ambient | J-STD-051, leads 7 mm, soldered on PCB |
RthJA |
230 |
K/W |
TSHA5500 Features
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
TSHA5500 Typical Application
• Infrared remote control and free air data transmission systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass
• This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass
TSHA5501 General Description
Infrared Emitting Diode,RoHS Compliant, 875 nm, GaAlAs
TSHA5501 Maximum Ratings
| PARAMETER | TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
| Junction temperature |
Tj |
100 |
||
| Operating temperature range |
Tamb |
- 40 to + 85 |
||
| Storage temperature range |
Tstg |
- 40 to + 100 |
||
| Soldering temperature | t 5 s, 2 mm from case |
Tsd |
260 |
|
| Thermal resistance junction/ambient | J-STD-051, leads 7 mm, soldered on PCB |
RthJA |
230 |
K/W |
TSHA5501 Features
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
TSHA5501 Typical Application
• Infrared remote control and free air data transmission systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass
• This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass
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