TSFF5400, TSFF5510, TSFF6210 Selling Leads, Datasheet
MFG:VISHAY Package Cooled:Leaded D/C:08+/09+
TSFF5400, TSFF5510, TSFF6210 Datasheet download
Part Number: TSFF5400
MFG: VISHAY
Package Cooled: Leaded
D/C: 08+/09+
TSFF5400, TSFF5510, TSFF6210
- Table of contents:
Info of TSFF5400
Info of TSFF5510
Info of TSFF6210
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About TSFF5400
PDF/DataSheet Download
Datasheet: TSFF5400
File Size: 88765 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About TSF
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Datasheet: TSF
File Size: 678072 KB
Manufacturer:
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About TSF
PDF/DataSheet Download
Datasheet: TSF
File Size: 678072 KB
Manufacturer:
Download : Click here to Download
TSFF5400 General Description
TSFF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package.
The new technology combines the high speed of DH GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology.
TSFF5400 Maximum Ratings
| Parameter | Test Conditions | Symbol | Value | Unit |
| Reverse Voltage | VR | 5 | V | |
| Forward Current | IF | 100 | mA | |
| Peak Forward Current | tp/T = 0.5, tp = 100s | IFM | 300 | mA |
| Surge Forward Current | tp100s | IFSM | 1 | A |
| Power Dissipation | PV | 250 | mW | |
| Junction Temperature | Tj | 100 | ||
| Operating Temperature Range | Tamb | 25...+85 | ||
| Storage Temperature Range | Tstg | 25...+85 | ||
| Soldering Temperature | t 5sec, 2 mm from case | Tsd | 260 | |
| Thermal Resistance Junction/Ambient | RthJA | 300 | K/W |
TSFF5400 Features
` High modulation bandwidth (35 MHz)
` Extra high radiant power and radiant intensity
` Low forward voltage
` Suitable for high pulse current operation
` Standard T13/4(ø 5 mm) package
` Angle of half intensity = ± 22°
` Peak wavelength p = 870 nm
` High reliability
` Good spectral matching to Si photodetectors
` Extra high radiant power and radiant intensity
` Low forward voltage
` Suitable for high pulse current operation
` Standard T13/4(ø 5 mm) package
` Angle of half intensity = ± 22°
` Peak wavelength p = 870 nm
` High reliability
` Good spectral matching to Si photodetectors
TSFF5400 Typical Application
IInfrared video data transmission between Camcorder and TV set.
Free air data transmission systems with high modulation frequencies or high data transmission rate requirements.
TSFF5510 General Description
TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
TSFF5510 Maximum Ratings
|
PARAMETER |
TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
|
Reverse voltage |
VR |
5 |
V | |
|
Forward current |
IF |
100 |
mA | |
|
Peak forward current |
tp/T = 0.5, tp = 100 s |
IFM |
200 |
mA |
|
Surge forward current |
tp = 100 s |
IFSM |
1 |
A |
|
Power dissipation |
PV |
180 |
mW | |
|
Junction temperature |
Tj |
100 |
| |
|
Operating temperature range |
Tamb |
- 40 to + 85 |
| |
|
Storage temperature range |
Tstg |
- 40 to + 100 |
| |
|
Soldering temperature |
t 5 s, 2 mm from case |
Tsd |
260 |
|
|
Thermal resistance junction/ambientz |
J-STD-051, leads 7 mm soldered on PCB |
RthJA |
230 |
K/W |
Tamb = 25 , unless otherwise specified
TSFF5510 Features
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): 5
• Leads with stand-off
• Peak wavelength: p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 38°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
• Package form: T-1¾
• Dimensions (in mm): 5
• Leads with stand-off
• Peak wavelength: p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 38°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
TSFF5510 Typical Application
• Infrared video data transmission between camcorder and TV set
• Free air data transmission systems with high data transmission rates
• Free air data transmission systems with high data transmission rates
TSFF6210 General Description
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF6210 Maximum Ratings
| PARAMETER | TEST CONDITION | SYMBOL | VALUE | UNIT |
| Reverse voltage | VR | 5 | V | |
| Forward current | IF | 100 | mA | |
| Peak forward current | tp/T = 0.5, tp = 100 s | IFM | 200 | mA |
| Surge forward current | tp = 100 s | IFSM | 1 | A |
| Power dissipation | PV | 180 | mW |
TSFF6210 Features
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Peak wavelength: p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Peak wavelength: p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
TSFF6210 Typical Application
• Infrared video data transmission between Camcorder and TV set
• Free air data transmission systems with high modulation frequencies or high data transmission rate requirements
• Smoke-automatic fire detectors
• Free air data transmission systems with high modulation frequencies or high data transmission rate requirements
• Smoke-automatic fire detectors
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