TSFF5210, TSFF5410, TSFFC403BVFN Selling Leads, Datasheet
MFG:VISHAY Package Cooled:Leaded D/C:08+
TSFF5210, TSFF5410, TSFFC403BVFN Datasheet download
Part Number: TSFF5210
MFG: VISHAY
Package Cooled: Leaded
D/C: 08+
TSFF5210, TSFF5410, TSFFC403BVFN
- Table of contents:
Info of TSFF5210
Info of TSFF5410
Info of TSFFC403BVFN
Attentive hint
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Top Sellers:
TOP
About TSF
PDF/DataSheet Download
Datasheet: TSF
File Size: 678072 KB
Manufacturer:
Download : Click here to Download
About TSFF5410
PDF/DataSheet Download
Datasheet: TSFF5410
File Size: 130565 KB
Manufacturer: Vishay Siliconix
Download : Click here to Download
About TSF
PDF/DataSheet Download
Datasheet: TSF
File Size: 678072 KB
Manufacturer:
Download : Click here to Download
TSFF5210 General Description
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
TSFF5210 Maximum Ratings
|
PARAMETER |
TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
|
Reverse voltage |
VR |
5 |
V | |
|
Forward current |
IF |
100 |
mA | |
|
Peak forward current |
tp/T = 0.5, tp = 100 s |
IFM |
200 |
mA |
|
Surge forward current |
tp = 100 s |
IFSM |
1 |
A |
|
Power dissipation |
PV |
180 |
mw |
TSFF5210 Features
• Package type: leaded
• Package form: T-1 3/4
• Dimensions (in mm): 5
• Leads with stand-off
• Peak wavelength: p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:= ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
• Package form: T-1 3/4
• Dimensions (in mm): 5
• Leads with stand-off
• Peak wavelength: p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:= ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
TSFF5210 Typical Application
• Infrared video data transmission between camcorder and TV set
• Free air data transmission systems with high modulation frequencies or high data transmission rate requirements
• Smoke-automatic fire detectors
• Free air data transmission systems with high modulation frequencies or high data transmission rate requirements
• Smoke-automatic fire detectors
TSFF5410 General Description
TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package.
DH technology combines high speed with high radiant power at wavelength of 870 nm.
DH technology combines high speed with high radiant power at wavelength of 870 nm.
TSFF5410 Maximum Ratings
Tamb = 25 °C, unless otherwise specified
| Parameter | Test condition | Symbol | Value | Unit |
| Reverse Voltage | VR | 5 | V | |
| Forward current | IF | 10 | mA | |
| Peak Forward Current | tp/T = 0.5, tp = 100 µs | IFM | 100 | mA |
| Surge Forward Current | tp = 100 µs | IFSM | 1 | A |
| Power Dissipation | PV | 250 | mW | |
| Junction Temperature | Tj | 100 | °C | |
| Operating Temperature Range | Tamb | - 25 to + 85 | °C | |
| Storage Temperature Range | Tstg | - 25 to + 85 | °C | |
| Soldering Temperature | t 5 sec, 2 mm from case | Tsd | 260 | °C |
| Thermal Resistance Junction/ Ambient |
RthJA | 300 | K/W |
TSFF5410 Features
• High modulation bandwidth (23 MHz)
• Extra high radiant power and radiant intensity
• Low forward voltage
• Suitable for high pulse current operation
• Standard T-1¾ ( 5 mm) package
• Angle of half intensity = ± 22°
• Peak wavelength p = 870 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free device
• Extra high radiant power and radiant intensity
• Low forward voltage
• Suitable for high pulse current operation
• Standard T-1¾ ( 5 mm) package
• Angle of half intensity = ± 22°
• Peak wavelength p = 870 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free device
TSFF5410 Typical Application
Infrared video data transmission between Camcorder and TV set.
Free air data transmission systems with high modulation frequencies or high data transmission rate requirements.
Free air data transmission systems with high modulation frequencies or high data transmission rate requirements.
MT58L64L18CT-10
Price: 4-6 USD
MT58L64L18CT-10 TQFP100
DL-7140-211M
Price: 5-6.5 USD
DL-7140-211M laser tube
74LVC74APG
Price: 4-5 USD
74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2
Price: 6.5-8 USD
CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX
Price: 0.284-0.286 USD
PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2
Price: 1-2 USD
IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB
Price: 1-2 USD
a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1
Price: 0.124-0.2 USD
PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L
Price: 0.177-0.178 USD
RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A
Price: 0.053-0.055 USD
STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013
Price: 1.45-1.5 USD
STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B
Price: 0.073-0.075 USD
SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components
