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TN6718A, TN6719A, TN6725A

Table of contents:
Info of TN6718A
Info of TN6719A
Info of TN6725A

TN6718A, TN6719A, TN6725A Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-92L D/C:08.09+

TN6718A, TN6719A, TN6725A Datasheet download

Five Points

Part Number: TN6718A

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-92L

D/C: 08.09+

Description: TRANS DARL NPN 50V 1.2A TO-226

Price Break

1500

Unit Price

.12420

Extended Price

186.30

(All prices are in USD) Prices for reference only

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TN6718A Parameters

Technical/Catalog Information	TN6718A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	1.2A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 250mA, 1V
Vce Saturation (Max) @ Ib, Ic	500mV @ 10mA, 250mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-226
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TN6718A TN6718A

TN6718A General Description

NPN Darlington Transistor

TN6718A Maximum Ratings

Symbol	Parameter	Value	Units
V_CEO	Collector-Emitter Voltage	100	V
V_CBO	Collector-Base Voltage	100	V
V_EBO	Emitter-Base Voltage	5	V
I_C	Collector Current - Continuous	1.2	mA
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

TN6718A Typical Application

TN6725A Datasheet

TN6719A Parameters

Technical/Catalog Information	TN6719A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	300V
Current - Collector (Ic) (Max)	200mA
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 30mA, 10V
Vce Saturation (Max) @ Ib, Ic	700mV @ 3mA, 30mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-226
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TN6719A TN6719A

TN6719A Maximum Ratings

Symbol	Parameter	Value	Units
V_CEO	Collector-Emitter Voltage	300	V
V_CBO	Collector-Base Voltage	300	V
V_EBO	Emitter-Base Voltage	7.0	V
I_C	Collector Current - Continuous	200	mA
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

TN6725A Parameters

Technical/Catalog Information	TN6725A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	1.2A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	4000 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 2mA, 200mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-226
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TN6725A TN6725A

TN6725A General Description

NPN Darlington Transistor

TN6725A Maximum Ratings

Symbol	Parameter	Value	Units
V_CEO	Collector-Emitter Voltage	50	V
V_CBO	Collector-Base Voltage	60	V
V_EBO	Emitter-Base Voltage	12	V
I_C	Collector Current - Continuous	1.2	mA
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

TN6725A Typical Application

TN6725A Datasheet

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