Transistors Bipolar (BJT) NPN Dbl-Dif 60V SI Exptl Plnr
TN6705A: Transistors Bipolar (BJT) NPN Dbl-Dif 60V SI Exptl Plnr
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 45 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 1.5 A | ||
DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-226 | Packaging : | Bulk |
Symbol |
Parameter |
Value |
Units |
VCEO |
Collector-Emitter Voltage |
45 |
V |
VCBO |
Collector-Base Voltage |
60 |
V |
VEBO |
Emitter-Base Voltage |
5.0 |
V |
IC |
Collector Current - Continuous |
1.5 |
mA |
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C..
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Technical/Catalog Information | TN6705A |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Current - Collector (Ic) (Max) | 1.5A |
Power - Max | 1W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 250mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-226 |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TN6705A TN6705A |