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TN0201K, TN0201L, TN0201L-TR1

Table of contents:
Info of TN0201K
Info of TN0201L
Info of TN0201L-TR1

TN0201K, TN0201L, TN0201L-TR1 Selling Leads, Datasheet

MFG:SAMPLE Package Cooled:SOT-23 D/C:08+

TN0201K, TN0201L, TN0201L-TR1 Datasheet download

Five Points

Part Number: TN0201K

MFG: SAMPLE

Package Cooled: SOT-23

D/C: 08+

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TN0201K General Description

N-Channel 20-V (D-S) MOSFET

TN0201K Features

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.

TN0201L Maximum Ratings

Parameter		Symbol	TN0201L	TN0401L	VN0300L	VN0300LS	Unit
Drain-Source Voltage		V_DS	20	20	30	30	V
Gate-Source Voltage		V_GS	20	20	30	30	V
Continuous Drain Current(TJ = 150)	T_A = 25	I_D	0.64	0.64	0.64	0.67	A
Continuous Drain Current(TJ = 150)	See Note	I_D	0.38	0.38	0.38	0.43
Pulsed Drain Current		I_DM	1.5	1.5	3	3
Power Dissipation	T_A = 25	P_D	0.8	0.8	0.8	0.9	W
Power Dissipation	T_A = 70	P_D	0.32	0.32	0.32	0.4	W
Thermal Resistance, Junction-to-Ambient		R_thJA	156	156	156	156
Operating Junction and Storage Temperature Range		TJ, Tstg	-55to150				/W

TN0201L Features

Low On-Resistance: 0.85
Low Threshold: 1.4V
Low Input Capacitance: 38 pF
Fast Switching Speed: 9 ns
Low Input and Output Leakage

TN0201L Typical Application

Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays

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