TN0200TS

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : TO-236-3
Continuous Drain Current : 1.2 A
Resistance Drain-Source RDS (on) : 400 mOhms at 4.5 V


Features:






Specifications






Description

The TN0200TS is designed as one kind of N-channel enhancement-mode MOSFET which can be used in direct logic-level interfact:TTL/CMOS;dirvers: relays, solenoids,lamps,hammers;battery operated systems,DC/DC converters;solid-state relays and load/Power switching-cell phones,pagers.

Features of the TN0200TS are:(1)low on-resistance:0.29;(2)low threshold:0.9 V(typ);(3)2.5-V or lower operation;(4)fast switching speed:22 ns;(5)low input and output leakage.Benefits can be summarized as low offset voltage,low-voltage operation,high-speed circuits and low error voltage,low battery voltage operation.

Also the absolute maximum ratings(TA=25 unless otherwise noted) of the TN0200TS can be summarized:(1)drain-source voltage:20 V;(2)gate-source voltage:+/-8 V;(3)continuous drain current(Tj=150):1.2(TA=25);(4)continuous drain current(Tj=150):1.0(TA=70);(5)pulsed drain current:4 A;(6)continuous source current(diode conduction):1.0 A;(7)power dissipation(TA=25):1.0 W;(8)power dissipation(TA=70):0.65 W;(9)operating junction and storage temperature range:55 to 150.