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The TMS28F020 flash memory is a 262144 by 8-bit (2097152-bit), programmable read-only memory that can be electrically bulk-erased and reprogrammed. It is available in 100000 and 10000 program/erase-endurance-cycle versions.
The TMS28F020 is offered in a 32-lead plastic leaded chip-carrier package using 1,25-mm (50-mil) lead spacing (FM suffix) and a 32-lead thin small-outline package (DD suffix).
† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values are with respect to VSS. 2. The voltage on any input can undershoot to 2 V for periods less than 20 ns. 3. The voltage on any output can overshoot to 7 V for periods less than 20 ns.
TMS28F020 Features
` Organization . . . 262144 by 8-Bits ` Pin Compatible With Existing 2-Megabit EPROMs ` VCC Tolerance ±10% ` All Inputs/Outputs TTL Compatible `Maximum Access/Minimum Cycle Time '28F020-10 100 ns '28F020-12 120 ns '28F020-15 150 ns '28F020-17 170 ns ` Industry-Standard Programming Algorithm ` 100000 and 10000 Program/Erase-Cycle Versions Available ` Latchup Immunity of 250 mA on All Input and Output Lines ` Low Power Dissipation (VCC = 5.5 V) Active Write . . . 55 mW Active Read . . . 165 mW Electrical Erase . . . 82.5 mW Standby . . . 0.55 mW (CMOS-Input Levels) ` Automotive Temperature Range 40°C to 125°C