Features: SpecificationsDescriptionTMS1103 is a kind of monolithic random-acess memory devices organized as 1024 one-bit words. There are some features of TMS1103as follows. First is low power dissipation. The second is input interface which is fully decoded, on-chip address decode and static char...
TMS1103: Features: SpecificationsDescriptionTMS1103 is a kind of monolithic random-acess memory devices organized as 1024 one-bit words. There are some features of TMS1103as follows. First is low power dissi...
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TMS1103 is a kind of monolithic random-acess memory devices organized as 1024 one-bit words. There are some features of TMS1103 as follows. First is low power dissipation. The second is input interface which is fully decoded, on-chip address decode and static charge protection. Then is output interface of OR-Tie capability. Next is address acess time which is 300 ns. The fifth is P-Channel silicon-gate technology. The last one is 18-pin 300-Mil dual-in-line packages.
What comes next is about the absolute maximum ratings of TMS1103 over operating free-air temperature range (unless otherwise noted). The VDD (supply voltage) is from -25 to 0.3 V. The VSS (supply voltage) is from -25 to 0.3 V. The input voltage (any input) is from -25 to 0.3 V. The continuous power dissipation is 1 W. The operating free-air temperature range is from 0 to 70. The storage temperature range is from -65 to 150.
The following is about the recommended operating conditions of TMS1103. The normal VDD (supply voltage) is 0 V. The minimum VSS (supply voltage) is 15.2 V, the typical is 15 V and the maximum is 16.8 V. The minimum VBB-VSS (supply voltage) is 3 V and the maximum is 4 V. The TA (operating free-air temperature range) is from 0 to 70.