TIL190-4, TIL191, TIL191-11G Selling Leads, Datasheet
MFG:989 Package Cooled:DIP-4 D/C:04+
TIL190-4, TIL191, TIL191-11G Datasheet download
Part Number: TIL190-4
MFG: 989
Package Cooled: DIP-4
D/C: 04+
TIL190-4, TIL191, TIL191-11G
- Table of contents:
Info of TIL190-4
Info of TIL191
Info of TIL191-11G
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About TIL190-4
PDF/DataSheet Download
Datasheet: TIL190-4
File Size: 289721 KB
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About TIL191
PDF/DataSheet Download
Datasheet: TIL191
File Size: 87066 KB
Manufacturer: TI [Texas Instruments]
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About TIL102
PDF/DataSheet Download
Datasheet: TIL102
File Size: 382544 KB
Manufacturer: TI [Texas Instruments]
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TIL191 General Description
These optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per
channel. The TIL191 has a single channel in a 4-pin package, the TIL192 has two channels in an 8-package,
and the TIL193 has four channels in a 16-pin package. The standard devices, TIL191, TIL192, and TIL193, are
tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and
100% minimum are designated with the suffix A and B respectively.
TIL191 Maximum Ratings
| Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±3.535 kV peak or dc (±2.5 kV rms) |
| Collector-emitter voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V |
| Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 V |
| Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 V |
| Input diode continuous forward current at (or below) 25°C free-air temperature (see Note 3) . . . . . . . 50 mA |
| Continuous total power dissipation at (or below) 25°C free-air temperature: |
| Phototransistor (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW |
| Input diode plus phototransistor per channel (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW |
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .55°C to 125°C |
| Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .260°C |
TIL191 Features
Gallium-Arsenide-Diode Infrared Source
Source Is Optically Coupled to Silicon npn Phototransistor
Choice of One, Two, or Four Channels
Choice of Three Current-Transfer Ratios
High-Voltage Electrical Isolation 3.535 Peak (2.5 kV rms)
Plastic Dual-In-Line Packages
UL Listed - File #E65085
TIL191 Connection Diagram
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