TIL111V-M

The TIL111V-M is designed as one kind of compatible with standard TTL integrated circuit device that has five points of features:(1)gallium arsenide diode infrared source optically coupled to a silicon NPN phototransistor;(2)high direct-current transfer ratio;(3)high voltage electrical isolation: 1.5 kV or 2.5 kV rating;(4)plasti dual-in-line package;(5)high-speed switching: tr=5 us, tf= 5 us typical.

The absolute maximum ratings of the TIL111V-M can be summarized as:(1)input-to-output voltage: +/- 1.5 kV;(2)collector base voltage: 70 V;(3)collector-emitter voltage: 30 V;(4)emitter-collector voltage: 7 V;(5)emitter-base voltage: 7 V;(6)input-diode reverse voltage: 3 V;(7)input diode continuous forward current at or below 25 free air temperature: 100 mA;(8)continuous power dissipation at 25 free air temperature: 150 mW or 250 mW;(9)storage temperature range: -55 to +150 ;(10)lead temperature 1.6 mm ( 1/16 inch) from case for 10 seconds: 260 . If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .