TIL102

The TIL102 is designed as one kind of gallium arsenide diode infrared source optically coupled to a high-gain silicon NPN darlington-connected phototransistor device that has five points of features:(1)photo coupling for isolator applications;(2)base lead provided for conventional transistor biasing;(3)high voltage electrical isolation: 1000 V rating;(4)stable over side temperature range;(5)high voltage transistor: V(br)CEO = 35 V min.

The absolute maximum ratings of the TIL102 can be summarized as:(1)input-to-output RMS voltage: 1 kV;(2)collector base voltage: 35 V;(3)collector-emitter voltage: 35 V;(4)emitter-collector voltage: 4 V;(5)emitter-base voltage: 4 V;(6)input-diode reverse voltage: 2 V;(7)input diode continuous forward current at or below 65 free air temperature: 40 mA;(8)continuous power dissipation at 25 free air temperature: 300 mW;(9)storage temperature range: -55 to +125 ;(10)lead temperature 1.6 mm ( 1/16 inch) from case for 10 seconds: 240 . If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .