THN6301E, THN6301U/AA1, THN6501F Selling Leads, Datasheet
MFG:TACHYONICS Package Cooled:AA1 523 D/C:08+
THN6301E, THN6301U/AA1, THN6501F Datasheet download
Part Number: THN6301E
MFG: TACHYONICS
Package Cooled: AA1 523
D/C: 08+
THN6301E, THN6301U/AA1, THN6501F
- Table of contents:
Info of THN6301E
Info of THN6301U/AA1
Info of THN6501F
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About THN3101Z
PDF/DataSheet Download
Datasheet: THN3101Z
File Size: 145974 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About THN3101Z
PDF/DataSheet Download
Datasheet: THN3101Z
File Size: 145974 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About THN3101Z
PDF/DataSheet Download
Datasheet: THN3101Z
File Size: 145974 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
THN6301E General Description
| Low noise and high gain small signal RF transistor |
| THN6301E is used as low noise amplifier, gain amplifier, mixer and VCO for VHF and UHF band applications, such as FRS, cordless phone,TV tuner, RF modulator, wireless LAN and GPS. |
THN6301E Connection Diagram
THN6501F General Description
| Low noise and high gain small signal RF transistor |
| THN6501F is used as low noise amplifier, gain amplifier, mixer and VCO for VHF and UHF band applications, such as FRS, cordless phone, TV tuner, RF modulator, wireless LAN and GPS. |
THN6501F Maximum Ratings
|
Symbol |
Parameter |
Ratings |
Unit |
|
VCBO |
Collector to Base Breakdown Voltage |
25 |
V |
|
VCEO |
Collector to Emitter Breakdown Voltage |
12 |
V |
|
VEBO |
Emitter to Base Breakdown Voltage |
2.5 |
V |
|
IC |
Collector Current (DC) |
100 |
mA |
|
PT |
Total Power Dissipation |
400 |
mW |
|
TSTG |
Storage Temperature |
-65 ~150 |
|
|
TJ |
Operating Junction Temperature |
150 |
THN6501F Features
· Low Noise Figure
NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC= 7 mA
· High Gain
MAG = 11.5 dB at f = 1 GHz, VCE = 10 V, IC= 20 mA
· High Transition Frequency
fT = 7 GHz at f = 1 GHz, VCE =10 V, IC=30 mA
THN6501F Typical Application
LNA and wide band amplifier up to GHz range
THN6501F Connection Diagram
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