Features: ·High gain bandwidth product fT = 17 GHz at VCE = 2 V, IC = 10 mA fT = 19 GHz at VCE = 3 V, IC = 15 mA·High power gain |S21|2 = 15 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MAG = 20 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz·Low noise figure NF = 1.4 dB at VCE = 2 V, IC = 2 mA, f = 1.8 GHzApp...
THN405Z: Features: ·High gain bandwidth product fT = 17 GHz at VCE = 2 V, IC = 10 mA fT = 19 GHz at VCE = 3 V, IC = 15 mA·High power gain |S21|2 = 15 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MAG = 20 dB at VC...
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SYMBOL | PARAMETER | RATING | UNIT |
BVCBO | Collector to base Breakdown voltage | 10 | V |
BVCEO | Collector to emitterBreakdown voltage | 4.5 | V |
BVEBO | Emitter to base Breakdown voltage | 1.5 | V |
IC | Collector current | 25 | MA |
Ptot | Total Power Dissipation | 75 | MW |
Tj | Junction temperature | 150 | |
Tstg | Storage temperaturerange | -65 to +150 |