MFG:Triquint Semiconductor Inc Category:RF and RFID Package Cooled:QFP100 D/C:09+
TGA39, TGA4046, TGA4507-EPU Datasheet download
Category: RF and RFID
MFG: Triquint Semiconductor Inc
Package Cooled: QFP100
D/C: 09+
Description: AMPLIFIER Q-BAND 41-47GHZ 2W
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PDF/DataSheet Download
Datasheet: TGA1045
File Size: 239914 KB
Manufacturer: TRIQUINT [TriQuint Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TGA1045
File Size: 239914 KB
Manufacturer: TRIQUINT [TriQuint Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TGA1045
File Size: 239914 KB
Manufacturer: TRIQUINT [TriQuint Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | TGA4046 |
| Vendor | Triquint Semiconductor Inc |
| Category | RF and RFID |
| Function | Amplifier |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TGA4046 TGA4046 |
The TriQuint TGA4046 is a compact High Power Amplifier MMIC for Q-band applications. The part is designed using TriQuint's 0.15um gate power pHEMT process.
The TGA4046 nominally provides 33dBm of Saturated Output Power, and 32dBm Output Power at 1dB gain compression from 41 - 46GHz. The MMIC also provides 17dB Gain and 16dB Return Loss. The part is ideally suited for markets such as Satellite Communications both commercial and military.
The TGA4046 is 100% DC and RF tested onwafer to ensure performance compliance. Lead-Free & RoHS compliant.
| SYMBOL | PARAMETER | VALUE | NOTES |
| Vd | Drain Voltage | 5V | 2/ |
| Vg | Gate Voltage Range | -1TO+0.5 V | |
| Id | Drain Current | 280mA | 2/3/ |
| |lg| | Gate Current | 6mA | 3/ |
| PIN | Input Continuous Wave Power | TBD | |
| PD | Power Dissipation | TBD | 2/4/ |
| TCH | Operating Channel Temperature | 150 | 5/6/ |
| TM | Mounting Temperature (30 Seconds) | 320 | |
| TSTG | Storage Temperature | -65 to 150 |
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Total current for the entire MMIC.
4/ When operated at this bias condition with a base plate temperature of TBD, the median life is reduced from TBD to TBD hrs.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). Formum life, it is ecommended that junction temperatures be maintained at the lowest possible levels.
6/ These ratings apply to each individual FET.
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