TGA1073G-EPU, TGA2501-EPU, TGA2509-EPU-FL Selling Leads, Datasheet
MFG:TQS Package Cooled:138 D/C:09+
TGA1073G-EPU, TGA2501-EPU, TGA2509-EPU-FL Datasheet download
Part Number: TGA1073G-EPU
MFG: TQS
Package Cooled: 138
D/C: 09+
MFG:TQS Package Cooled:138 D/C:09+
TGA1073G-EPU, TGA2501-EPU, TGA2509-EPU-FL Datasheet download
MFG: TQS
Package Cooled: 138
D/C: 09+
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PDF/DataSheet Download
Datasheet: TGA1045
File Size: 239914 KB
Manufacturer: TRIQUINT [TriQuint Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TGA1045
File Size: 239914 KB
Manufacturer: TRIQUINT [TriQuint Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TGA1045
File Size: 239914 KB
Manufacturer: TRIQUINT [TriQuint Semiconductor]
Download : Click here to Download
The TriQuint TGA2509-EPU-FL is a Wideband High Power Amplifier with 25 dB AGC range. The HPA operates from 2-20 GHz and provides 29dBm of output power at 1 dB gain compression with small signal gain of 15 dB.
The TGA2509-EPU-FL is suitable for a variety of applications such as wideband electronic warfare systems, test equipment and VSAT and Digital Radio. The flange lead package has a high thermal conductivity copper alloy base.
Symbol | Parameter 1/ | Value | Notes |
V+ | Positive Supply Voltage | 12.5 V | 2/ |
Vg1 | Gate 1 Supply Voltage Range | -2V TO 0 V | |
Vg2 | Gate 2 Supply Voltage Range | -2V TO 0 V | |
Vc | AGC Control Voltage Range | Vc < +5 V V+ Vc < 14V |
|
I+ | Positive Supply Current | 1.4A | 2/ |
| IG | | Gate Supply Current | 70 mA | |
PIN | Input Continuous Wave Power | 30 dBm | 2/ |
PD | Power Dissipation (without using AGC) | 13.2 W | 2/ 3/ |
PD | Power Dissipation (when Vc < +2V) | 10.6 W | 2/ 3/ |
TCH | Operating Channel Temperature | 150 | 4/ 5/ |
TM | Mounting Temperature (30 Seconds) | 210 | |
TSTG | Storage Temperature | -65 to 150 |
1/ These ratings represent the maximum operable values for this device.
2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ When operated at this power dissipation with a base plate temperature of 60 , the median life is 1 E+6 hours.
4/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
5/ These ratings apply to each individual FET.