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TF321M, TF321M-A, TF321S

Table of contents:
Info of TF321M
Info of TF321M-A
Info of TF321S

TF321M, TF321M-A, TF321S Selling Leads, Datasheet

MFG:SAK Package Cooled:TO-220 D/C:89

TF321M, TF321M-A, TF321S Datasheet download

Five Points

Part Number: TF321M

MFG: SAK

Package Cooled: TO-220

D/C: 89

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TF321M Maximum Ratings

Parameter	Symbol	Ratings			Unit	Conditions
Parameter	Symbol	TF321M	TF341M	TF361M	Unit	Conditions
Repetitive peak off-state voltage	V_DRM	200	400	600	V	T_j=40 to +125°C, R_GK=1k
Repetitive peak off-state voltage	V_RRM	200	400	600	V
Non-repetitive peak off-state voltage	V_DSM	300	500	700	V
Non-repetitive peak reverse voltage	V_RSM	300	500	700	V
Average on-state current	I_T(AV)	3.0			A	50Hz Half-cycle sinewave, Continuous current, Tc=87°C
RMS on-state current	I_T(RMS)	4.7			A
Surge on-state current	I_TSM	60			A	50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
Peak forward gate current	I_FGM	2.0			A	f 50Hz, duty 10%
Peak forward gate voltage	V_FGM	10			V	f 50Hz, duty 10%
Peak reverse gate voltage	V_RGM	5.0			V	f 50Hz
Peak gate power loss	P_GM	5.0			W	f 50Hz, duty 10%
Average gate power loss	P_G(AV)	0.5			W
Junction temperature	T_j	40 to +125			°C
Storage temperature	T_stg	40 to +125			°C
Isolation voltage	V_ISO	1500			V	50Hz Sine wave, RMS, Terminal to Case, 1 min.

TF321M Features

·Repetitive peak off-state voltage: V_DRM=200, 400, 600V
·Average on-state current: I_T(AV)=3A
·Gate trigger current: I_GT=10mA max

TF321M-A Maximum Ratings

Parameter	Symbol	Ratings			Unit	Conditions
Parameter	Symbol	TF321M-A	TF341M-A	TF361M-A	Unit	Conditions
Repetitive peak off-state voltage	V_DRM	200	400	600	V	T_j=40 to +125°C, R_GK=1k
Repetitive peak off-state voltage	V_RRM	200	400	600	V
Non-repetitive peak off-state voltage	V_DSM	300	500	700	V
Non-repetitive peak reverse voltage	V_RSM	300	500	700	V
Average on-state current	I_T(AV)	3.0			A	50Hz Half-cycle sinewave, Continuous current, Tc=87°C
RMS on-state current	I_T(RMS)	4.7			A
Surge on-state current	I_TSM	60			A	50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
Peak forward gate current	I_FGM	2.0			A	f 50Hz, duty 10%
Peak forward gate voltage	V_FGM	10			V	f 50Hz, duty 10%
Peak reverse gate voltage	V_RGM	5.0			V	f 50Hz
Peak gate power loss	P_GM	5.0			W	f 50Hz, duty 10%
Average gate power loss	P_G(AV)	0.5			W
Junction temperature	T_j	40 to +110			°C
Storage temperature	T_stg	40 to +125			°C

TF321M-A Features

·Repetitive peak off-state voltage: V_DRM=200, 400, 600V
·Average on-state current: I_T(AV)=3A
·High sensitive Gate trigger Current: I_GT=0.1mA max

TF321S Maximum Ratings

Parameter	Symbol	Ratings			Unit	Conditions
		TF321S	TF341S	TF361S
Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak off-state voltage Non-repetitive peak reverse voltage	VDRM VRRM VDSM VRSM	200 200 300 300	400 400 500 500	600 600 700 700	V V V V	Tj=40 to +125°C, RGK=1k½
Average on-state current RMS on-state current Surge on-state current Peak forward gate current Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage	IT(AV) IT (RMS) ITSM IFGM VFGM VRGM PGM PG(AV) Tj Tstg VISO	3.0 4.7 60 2.0 10 5.0 5.0 0.5 40 to +125 40 to +125 1500			A A A A V V W W °C °C V	50Hz Half-cycle sinewave, Continuous current, Tc=93°C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C f 50Hz f 50Hz, duty 10% f 50Hz, duty 10% 50Hz Sine wave, RMS, Terminal to Case, 1 min.

TF321S Features

·Repetitive peak off-state voltage: VDRM=200, 400, 600V
·Average on-state current: IT(AV)=3A
·Gate trigger current: IGT=15mA max
·Isolation voltage: VISO=1500V(50Hz Sine wave, RMS)

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