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TCST1230, TCST1300, TCST2000

Table of contents:
Info of TCST1230
Info of TCST1300
Info of TCST2000

TCST1230, TCST1300, TCST2000 Selling Leads, Datasheet

MFG:Vishay/Semiconductors Category:Sensors, Transducers Package Cooled:GAP-5-DIP-4 D/C:2010+

TCST1230, TCST1300, TCST2000 Datasheet download

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Part Number: TCST1230

Category: Sensors, Transducers

MFG: Vishay/Semiconductors

Package Cooled: GAP-5-DIP-4

D/C: 2010+

Description: SENSR OPTO SLOT 2.8MM TRANS THRU

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TCST1230 Parameters

Technical/Catalog Information	TCST1230
Vendor	Vishay/Semiconductors
Category	Sensors, Transducers
Sensing Distance	0.110" (2.8mm)
Sensing Method	Transmissive
Voltage - Collector Emitter Breakdown (Max)	70V
Current - Collector (Ic) (Max)	100mA
Current - DC Forward (If)	60mA
Output Configuration	Phototransistor
Response Time	15s , 10s <!--10us-->
Type	Unamplified
Mounting Type	Through Hole
Package / Case	PCB Mount
Packaging	Tube
Operating Temperature	-25°C ~ 85°C
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TCST1230 TCST1230 751 1036 5 ND 75110365ND 751-1036-5

TCST1230 General Description

This device has a compact construction where the emittig-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor.

TCST1230 Features

Gap 3 mm
Package height: 6 mm
Aperture 0.5 mm
Plastic polycarbonate housing
Current Transfer Ratio (CTR) of typical 5%

TCST1230 Typical Application

Position sensor for shaft encoder
Detection of opaque material such as paper, IBM cards, magnetic tapes etc
Limit switch for mechanical motions in VCR
Read/ write head position in data storage equipment
General purpose wherever the space is limited

TCST1300 General Description

This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor.

TCST1300 Maximum Ratings

Parameter	Test Conditions	Symbol	Value	Unit
Reverse voltage		V_R	6	V
Forward current		I_F	60	mA
Forward surge current	t_p 10 s	I_FSM	3	A
Power dissipation	T_amb 25	P_V	100	mW
Junction temperature		T_j	100

TCST1300 Features

· Compact construction
· No setting efforts
· Polycarbonate case protected against ambient light
· 2 case variations
· 3 different apertures
· CTR selected in groups (regarding fourth number of type designation)

TCST1300 Typical Application

· Contactless optoelectronic switch, control and counter

TCST2000 General Description

This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis.

The operating wavelength is 950 nm. The detector consists of a phototransistor.

TCST2000 Maximum Ratings

Parameter	Test Conditions	Symbol	Value	Unit
Reverse voltage		V_R	6	V
Forward current		I_F	60	mA
Forward surge current	tp 10 s	I_FSM	3	A
Power dissipation	T_amb 25	P_V	100	mW
Junction temperature		T_j	100
Collector emitter voltage		V_CEO	70	V
Emitter collector voltage		V_ECO	7	V
Collector current		I_C	100	mA
Power dissipation	tp /T = 0.5, tp 10 ms	I_CM	200	mW
Power dissipation	T_amb 25	P_V	150	mW
Junction temperature		T_j	100
Total power dissipation	T_amb 25	P_tot	250	mW
Ambient temperature range		T_amb	55 to +85
Storage temperature range		T_stg	55 to +100
Soldering temperature	2 mm from case, t 5 s	T_sd	260

TCST2000 Features

· Compact construction
· No setting efforts
· 2 case variations
· Polycarbonate case protected against ambient light
· Current Transfer Ratio (CTR) of typical 2.5%

TCST2000 Typical Application

· Contactless optoelectronic switch, control and counter

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